Invention Grant
- Patent Title: Charge pump device
- Patent Title (中): 电荷泵装置
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Application No.: US14010499Application Date: 2013-08-26
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Publication No.: US09007121B2Publication Date: 2015-04-14
- Inventor: Hsiang-Yi Chiu , Zhen-Guo Ding
- Applicant: NOVATEK Microelectronics Corp.
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: NOVATEK Microelectronics Corp.
- Current Assignee: NOVATEK Microelectronics Corp.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW101106208A 20120224
- Main IPC: H02M1/36
- IPC: H02M1/36 ; G05F1/10 ; H02M3/07 ; H02M1/14 ; H02M1/00 ; H02M1/32

Abstract:
A charge pump device is disclosed. The charge pump device includes a driving stage, for generating a driving signal corresponding to a driving capability; a charge pump circuit, for generating an output voltage according to the driving signal; a comparing circuit, comprising a first comparator for comparing the output voltage and a first reference voltage to generate a first comparing result; an overload detection circuit, for generating a detection result according to at least one of the first comparing result and the output voltage; and a driving capability control circuit, coupled between the overload detection circuit and the driving stage for controlling the driving capability corresponding to the driving signal according to the detection result.
Public/Granted literature
- US20130342265A1 Charge Pump Device Public/Granted day:2013-12-26
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