Invention Grant
- Patent Title: Semiconductor device including a diode and method of manufacturing the same
- Patent Title (中): 包括二极管的半导体器件及其制造方法
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Application No.: US13684884Application Date: 2012-11-26
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Publication No.: US09012877B2Publication Date: 2015-04-21
- Inventor: Jae-kyu Lee , Seung-pil Ko , Yong-jun Kim , Eun-jung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0023599 20120307
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L45/00 ; H01L27/24

Abstract:
A semiconductor device includes a first semiconductor layer extending in a first direction on a substrate, a plurality of second semiconductor layers spaced apart in the first direction on the first semiconductor layer, and an insulation layer structure surrounding side walls of the first semiconductor layer and the plurality of second semiconductor layers. The first semiconductor layer may have a first conductivity type, and the plurality of second semiconductor layers may have a second conductivity type.
Public/Granted literature
- US20130234090A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-09-12
Information query
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