Invention Grant
- Patent Title: Microelectromechanical system-based resonator device
- Patent Title (中): 基于微机电系统的谐振器装置
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Application No.: US13911041Application Date: 2013-06-05
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Publication No.: US09013089B2Publication Date: 2015-04-21
- Inventor: Chun-Yin Tsai , Feng-Chia Hsu , Tsun-Che Huang , Chin-Hung Wang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW102100004A 20130102
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H9/205 ; H03H9/05

Abstract:
The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.
Public/Granted literature
- US20140184029A1 MICROELECTROMECHANICAL SYSTEM-BASED RESONATOR DEVICE Public/Granted day:2014-07-03
Information query
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