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公开(公告)号：US09841281B2
公开(公告)日：2017-12-12
申请号：US14553595
申请日：2014-11-25
发明人： Chung-Yuan Su , Chun-Yin Tsai , Chao-Ta Huang
IPC分类号： B81B3/00 , G01C19/5762
CPC分类号： G01C19/5762 , B81B3/0045 , B81B2201/0235 , B81B2201/0242 , B81B2203/0163 , Y10T74/12
摘要： A micro-electromechanical apparatus includes a rotary element, at least one restraint and at least two folded springs. The rotary element is capable of rotating with respect to an axis. The folded springs are symmetrically disposed about the axis. Each folded spring has a moving end and a fixed end, the moving end is connected to the rotary element, and the fixed end is connected to the at least one restraint. The moving end is not located on the axis, and the fixed end is not located on the axis. A moving distance is defined as a distance between the moving end and the axis, a fixed distance is defined as a distance between the fixed end and the axis. A spring length is defined as a distance between the moving end and the fixed end. The spring length is varied according to the rotation of the rotary element.
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公开(公告)号：US09966394B2
公开(公告)日：2018-05-08
申请号：US15084494
申请日：2016-03-30
发明人： Feng-Chia Hsu , Yu-Sheng Lin , Chun-Yin Tsai , Sheng-Ren Chiu
IPC分类号： H01L27/144 , H01L31/0216 , H01L31/024 , H01L31/02 , H01L31/0232 , H01L31/18 , G01J5/02 , G01J5/10 , G01J5/12 , G01J5/20
CPC分类号： H01L27/1443 , G01J5/023 , G01J5/024 , G01J5/10 , G01J5/12 , G01J5/20 , H01L31/02005 , H01L31/02164 , H01L31/02327 , H01L31/024 , H01L31/18
摘要： A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
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公开(公告)号：US20170186786A1
公开(公告)日：2017-06-29
申请号：US15084494
申请日：2016-03-30
发明人： Feng-Chia Hsu , Yu-Sheng Lin , Chun-Yin Tsai , Sheng-Ren Chiu
IPC分类号： H01L27/144 , H01L23/522 , H01L23/532 , H01L31/18 , H01L31/024 , H01L31/02 , H01L31/0232 , H01L23/528 , H01L31/0216
CPC分类号： H01L27/1443 , G01J5/023 , G01J5/024 , G01J5/10 , G01J5/12 , G01J5/20 , H01L31/02005 , H01L31/02164 , H01L31/02327 , H01L31/024 , H01L31/18
摘要： A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
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公开(公告)号：US09013089B2
公开(公告)日：2015-04-21
申请号：US13911041
申请日：2013-06-05
发明人： Chun-Yin Tsai , Feng-Chia Hsu , Tsun-Che Huang , Chin-Hung Wang
CPC分类号： H03H9/178 , B81B7/02 , H03H3/0072 , H03H3/02 , H03H9/02007 , H03H9/02244 , H03H9/0595 , H03H9/17 , H03H9/205 , H03H2003/021 , H03H2003/027 , H03H2009/02496
摘要： The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.
摘要翻译： 本公开提供了一种用于基于微机电系统（MEMS）的谐振器装置的结构。 用于基于MEMS的谐振器装置的结构包括至少一个谐振器单元。 所述至少一个谐振器单元包括其中具有沟槽的衬底。 一对第一电极设置在沟槽的一对侧壁上。 压电材料填充沟槽，覆盖一对第一电极。 第二电极嵌入压电材料中，通过压电材料与一对第一电极分离。 设置在沟槽中的第二电极平行于该对第一电极。
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公开(公告)号：US20140184029A1
公开(公告)日：2014-07-03
申请号：US13911041
申请日：2013-06-05
发明人： Chun-Yin Tsai , Feng-Chia Hsu , Tsun-Che Huang , Chin-Hung Wang
IPC分类号： H01L41/047 , B81B7/02
CPC分类号： H03H9/178 , B81B7/02 , H03H3/0072 , H03H3/02 , H03H9/02007 , H03H9/02244 , H03H9/0595 , H03H9/17 , H03H9/205 , H03H2003/021 , H03H2003/027 , H03H2009/02496
摘要： The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.
摘要翻译： 本公开提供了一种用于基于微机电系统（MEMS）的谐振器装置的结构。 用于基于MEMS的谐振器装置的结构包括至少一个谐振器单元。 所述至少一个谐振器单元包括其中具有沟槽的衬底。 一对第一电极设置在沟槽的一对侧壁上。 压电材料填充沟槽，覆盖一对第一电极。 第二电极嵌入压电材料中，通过压电材料与一对第一电极分离。 设置在沟槽中的第二电极平行于该对第一电极。
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