发明授权
- 专利标题： Transient voltage suppressor circuit, and diode device therefor and manufacturing method thereof
- 专利标题（中）： 瞬态电压抑制电路及其二极管装置及其制造方法
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申请号： US14482858申请日： 2014-09-10
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公开(公告)号： US09018070B2公开(公告)日： 2015-04-28
- 发明人: Tsung-Yi Huang , Jin-Lian Su
- 申请人： Tsung-Yi Huang , Jin-Lian Su
- 申请人地址： TW Hsin-Chu
- 专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Tung & Associates
- 主分类号： H01L21/8222
- IPC分类号： H01L21/8222 ; H01L29/66 ; H01L27/08 ; H01L27/02 ; H01L21/265 ; H01L21/762 ; H01L29/06
摘要：
The present invention discloses a transient voltage suppressor (TVS) circuit, and a diode device therefor and a manufacturing method thereof. The TVS circuit is for coupling to a protected circuit to limit amplitude of a transient voltage which is inputted to the protected circuit. The TVS circuit includes a suppressor device and at least a diode device. The diode device is formed in a substrate, which includes: a well formed in the substrate; a separation region formed beneath the upper surface; a anode region and a cathode region, which are formed at two sides of the separation region beneath the upper surface respectively, wherein the anode region and the cathode region are separated by the separation region; and a buried layer, which is formed in the substrate below the well with a higher impurity density and a same conductive type as the well.
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