Invention Grant
- Patent Title: Low shrinkage dielectric films
- Patent Title (中): 低收缩介电膜
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Application No.: US13834333Application Date: 2013-03-15
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Publication No.: US09018108B2Publication Date: 2015-04-28
- Inventor: Sukwon Hong , Toan Tran , Abhijit Mallick , Jingmei Liang , Nitin K. Ingle
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/56 ; C23C16/452 ; C23C16/34

Abstract:
Methods of forming a dielectric layer on a substrate are described, and may include introducing a first precursor into a remote plasma region fluidly coupled with a substrate processing region of a substrate processing chamber A plasma may be formed in the remote plasma region to produce plasma effluents. The plasma effluents may be directed into the substrate processing region. A silicon-containing precursor may be introduced into the substrate processing region, and the silicon-containing precursor may include at least one silicon-silicon bond. The plasma effluents and silicon-containing precursor may be reacted in the processing region to form a silicon-based dielectric layer that is initially flowable when formed on the substrate.
Public/Granted literature
- US20140213070A1 LOW SHRINKAGE DIELECTRIC FILMS Public/Granted day:2014-07-31
Information query
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