Invention Grant
- Patent Title: Semiconductor reaction chamber with plasma capabilities
- Patent Title (中): 具有等离子体能力的半导体反应室
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Application No.: US13948055Application Date: 2013-07-22
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Publication No.: US09018111B2Publication Date: 2015-04-28
- Inventor: Robert Brennan Milligan , Fred Alokozai
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C16/455 ; H01L21/3065 ; H01L21/02 ; H01L21/314 ; H01J37/32

Abstract:
A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
Public/Granted literature
- US20150024609A1 SEMICONDUCTOR REACTION CHAMBER WITH PLASMA CAPABILITIES Public/Granted day:2015-01-22
Information query
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