发明授权
- 专利标题： EBG structure, semiconductor device, and printed circuit board
- 专利标题（中）： EBG结构，半导体器件和印刷电路板
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申请号： US13677840申请日： 2012-11-15
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公开(公告)号： US09019032B2公开(公告)日： 2015-04-28
- 发明人: Tadahiro Sasaki , Kazuhiko Itaya , Hiroshi Yamada
- 申请人： Tadahiro Sasaki , Kazuhiko Itaya , Hiroshi Yamada
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-075519 20120329
- 主分类号： H01P5/08
- IPC分类号： H01P5/08 ; H05K1/16 ; H05K1/09 ; H05K1/02 ; H05K1/18
摘要：
An EBG structure according to an embodiment includes an electrode unit made of a first conductor and provided with a space, a patch unit provided approximately parallel to the electrode unit and made of a second conductor, an insulating layer provided between the electrode unit and the patch unit, a first via provided between the patch unit and the electrode unit in the insulating layer and connected to the patch unit and the electrode unit, and a second via provided between the patch unit and the space in the insulating layer, connected to the patch unit, and not connected to the electrode unit.