发明授权
- 专利标题： Method of forming multi-layer graphene
- 专利标题（中）： 形成多层石墨烯的方法
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申请号： US13451775申请日： 2012-04-20
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公开(公告)号： US09023221B2公开(公告)日： 2015-05-05
- 发明人: Yun-sung Woo , Jae-young Choi , Won-mook Choi , Hyeon-jin Shin , Seon-mi Yoon
- 申请人： Yun-sung Woo , Jae-young Choi , Won-mook Choi , Hyeon-jin Shin , Seon-mi Yoon
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2011-0037983 20110422
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; B32B37/02 ; H01L21/027 ; C01B31/02 ; C01B31/04 ; B82Y30/00 ; B82Y40/00
摘要：
A method of forming a multi-layer graphene includes forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer on a substrate, and then forming the graphene on the graphitizing metal catalyst layer, and removing the graphitizing metal catalyst layer.
公开/授权文献
- US20120267041A1 METHOD OF FORMING MULTI-LAYER GRAPHENE 公开/授权日：2012-10-25
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