Invention Grant
- Patent Title: Light emitting diode with improved light extraction efficiency
- Patent Title (中): 具有提高光提取效率的发光二极管
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Application No.: US13816572Application Date: 2011-02-19
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Publication No.: US09030090B2Publication Date: 2015-05-12
- Inventor: Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
- Applicant: Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0077924 20100812
- International Application: PCT/KR2011/001105 WO 20110219
- International Announcement: WO2012/020901 WO 20120216
- Main IPC: H01J63/04
- IPC: H01J63/04 ; H05B33/06 ; H01L33/38 ; H01L33/46 ; H01L33/20

Abstract:
Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.
Public/Granted literature
- US20130134867A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY Public/Granted day:2013-05-30
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