Invention Grant
- Patent Title: Magnetoresistance sensor and fabricating method thereof
- Patent Title (中): 磁阻传感器及其制造方法
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Application No.: US13082825Application Date: 2011-04-08
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Publication No.: US09030199B2Publication Date: 2015-05-12
- Inventor: Fu-Tai Liou , Chien-Min Lee
- Applicant: Fu-Tai Liou , Chien-Min Lee
- Applicant Address: TW Hsinchu County
- Assignee: Voltafield Technology Corporation
- Current Assignee: Voltafield Technology Corporation
- Current Assignee Address: TW Hsinchu County
- Agency: Kamrath IP Lawfirm, P.A.
- Agent Alan D. Kamrath
- Priority: TW99147343A 20101231
- Main IPC: G01R33/02
- IPC: G01R33/02 ; H05K3/42 ; H05K3/46 ; G01R33/09 ; B82Y25/00 ; G01D5/16 ; G01R33/06

Abstract:
An apparatus of a magnetoresistance sensor consisting of a substrate, a conductive unit on the substrate, and a magnetoresistance structure on the conductive unit is provided. The conductive unit includes a first surface and a second surface opposite to each other, and the first surface faces the substrate. The magnetoresistance structure is formed on the second surface of the conductive unit and is electrically connected to the conductive unit. The magnetoresistance sensor has high performance and reliability. A magnetoresistance sensor fabricating method based on this apparatus is also provided.
Public/Granted literature
- US20120169330A1 MAGNETORESISTANCE SENSOR AND FABRICATING METHOD THEREOF Public/Granted day:2012-07-05
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