发明授权
- 专利标题： Magnetic tunnel junction with electronically reflective insulative spacer
- 专利标题（中）： 磁性隧道结与电子反射绝缘垫片
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申请号： US13611230申请日： 2012-09-12
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公开(公告)号： US09030864B2公开(公告)日： 2015-05-12
- 发明人: Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
- 申请人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
- 申请人地址： US CA Cupertino
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Cupertino
- 代理机构： Mueting, Raasch & Gebhardt, P.A.
- 主分类号： G11C11/16
- IPC分类号： G11C11/16
摘要：
Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.
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