Invention Grant
- Patent Title: Method for forming an electrical connection between metal layers
- Patent Title (中): 在金属层之间形成电连接的方法
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Application No.: US13562534Application Date: 2012-07-31
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Publication No.: US09032615B2Publication Date: 2015-05-19
- Inventor: Edward O. Travis , Douglas M. Reber , Mehul D. Shroff
- Applicant: Edward O. Travis , Douglas M. Reber , Mehul D. Shroff
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Joanna G. Chiu; James L. Clingan, Jr.
- Main IPC: H01K3/10
- IPC: H01K3/10 ; G06F17/50 ; H01L21/768 ; H01L23/522 ; H01L29/41
Abstract:
A method forms an electrical connection between a first metal layer and a second metal layer. The second metal layer is above the first metal layer. A first via is formed between the first metal layer and the second metal layer. A first measure of a number of vacancies expected to reach the first via is obtained. A second via in at least one of the first metal layer and the second metal layer is formed if the measure of vacancies exceeds a first predetermined number.
Public/Granted literature
- US20140038317A1 METHOD FOR FORMING AN ELECTRICAL CONNECTION BETWEEN METAL LAYERS Public/Granted day:2014-02-06
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