Invention Grant
- Patent Title: Methods of selectively removing a substrate material
- Patent Title (中): 选择性去除基材的方法
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Application No.: US13712699Application Date: 2012-12-12
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Publication No.: US09034769B2Publication Date: 2015-05-19
- Inventor: Mark A. Bossler , Jaspreet S. Gandhi , Christopher J. Gambee , Randall S. Parker
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L23/538 ; H01L21/306 ; H01L21/3065 ; H01L21/02
Abstract:
A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.
Public/Granted literature
- US20140159239A1 METHODS OF SELECTIVELY REMOVING A SUBSTRATE MATERIAL AND RELATED SEMICONDUCTOR STRUCTURES Public/Granted day:2014-06-12
Information query
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