发明授权
- 专利标题： Memory device with background built-in self-testing and background built-in self-repair
- 专利标题（中）： 内存设备背景内置自检和背景内置自修复
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申请号： US13732783申请日： 2013-01-02
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公开(公告)号： US09037928B2公开(公告)日： 2015-05-19
- 发明人: Bendik Kleveland , Dipak K Sikdar , Rajesh Chopra , Jay Patel
- 申请人： Bendik Kleveland , Dipak K Sikdar , Rajesh Chopra , Jay Patel
- 申请人地址： US CA Santa Clara
- 专利权人： MoSys, Inc.
- 当前专利权人： MoSys, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： MoSys, Inc. (crn)
- 主分类号： G06F11/20
- IPC分类号： G06F11/20 ; G11C29/44 ; G11C29/16 ; G06F11/10 ; G11C29/12 ; G11C29/06 ; G11C29/04
摘要：
A memory device with background built-in self-testing (BBIST) includes a plurality of memory blocks; a memory buffer to offload data from one of the plurality of memory blocks temporarily; and a memory block stress controller to control a stress test applied to the one of the memory blocks when the data is temporarily offloaded on the memory buffer. The stress test tests for errors in the one of the plurality of the memory blocks.
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