摘要:
A memory device with background built-in self-testing (BBIST) includes a plurality of memory blocks; a memory buffer to offload data from one of the plurality of memory blocks temporarily; and a memory block stress controller to control a stress test applied to the one of the memory blocks when the data is temporarily offloaded on the memory buffer. The stress test tests for errors in the one of the plurality of the memory blocks.
摘要:
A memory device with background built-in self-testing (BBIST) includes a plurality of memory blocks; a memory buffer to offload data from one of the plurality of memory blocks temporarily; and a memory block stress controller to control a stress test applied to the one of the memory blocks when the data is temporarily offloaded on the memory buffer. The stress test tests for errors in the one of the plurality of the memory blocks.
摘要:
A memory device that includes an input interface that receives instructions and input data on a first plurality of serial links. The memory device includes a memory block having a plurality of banks, wherein each of the banks has a plurality of memory cells, and wherein the memory block has multiple ports. An output interface provides data on a second plurality of serial links. A cache coupled to the IO interface and to the plurality of banks, stores write data designated for a given memory cell location when the given memory cell location is currently being accessed, thereby avoiding a collision. Memory device includes one or more memory access controllers (MACs) coupled to the memory block and one or more arithmetic logic units (ALUs) coupled to the MACs. The ALUs perform one or more operations on data prior to the data being transmitted out of the IC via the IO, such as read/modify/write or statistics or traffic management functions, thereby reducing congestion on the serial links and offloading appropriate operations from the host to the memory device.
摘要:
Disclosed is a method for fabricating reliable interconnect structures on a semiconductor substrate that has at least a first dielectric layer, a first patterned metallization layer, a second dielectric layer over the first patterned metallization layer, and a plurality of tungsten plugs formed in the second dielectric layer. The method includes patterning a second metallization layer that overlies the second dielectric layer and the plurality of tungsten plugs, such that the patterning leaves at least one of the plurality of tungsten plugs not completely covered by the second metallization layer. Submersing the semiconductor substrate into a dilute nitric acid solution until a passivating tungsten oxide is formed over a portion of the at least one of the plurality of tungsten plugs that is not completely covered by the second metallization layer. The method further includes submersing the semiconductor substrate into a basic cleaning solution, and the passivating tungsten oxide is configured to prevent the at least one of the plurality of tungsten plugs from eroding in the basic cleaning solution. Preferably, the dilute nitric acid solution is adjusted to have a pH level of between about 1.5 and about 3 so that the passivating tungsten oxide becomes insoluble.
摘要:
An embodiment of the present invention provides an RF ID card reader, comprising RF ID circuitry to generate an RF ID signal, a transceiver in communication with said RF ID circuitry and an array antenna associated with said transceiver for scanning an area for at least one tag and establishing communication with at least one tag.
摘要:
In one aspect, a vacuum processing system comprising a vacuum processing chamber and a turbo-molecular pump disposed on the vacuum processing chamber is provided. The turbo-molecular pump comprises a casing having an inlet port and an outlet port, a stator disposed on an inner wall of the casing, a rotor disposed in the stator, and a motor extending coaxially with the rotor, wherein at least the first stage of the pump is enlarged with no correspondingly larger pump components other than the corresponding upper portion of the housing.
摘要:
The present invention is directed to a disperse dye of formula (1) Wherein, X, Y and Z are, independently, hydrogen, halogen, cyano, nitro or SO2F; Wherein at least one of X, Y and Z is SO2F. R1 is hydrogen, methyl, hydroxyl or NHR4; R2 is hydrogen, chloro or methoxy; R3 is hydrogen, (C1-C4)-alkyl or —CH2(CH2)nCOOCH2CN; R5 is hydrogen, (C1-C4)-alkyl or —CH2(CH2)mCOOCH2CN; R4 is —COCH3, —CO C2H5, —SO2CH3 or SO2C2H5; n and m are independently 0,1 or 2, with the proviso: —When, Y and Z both are Cl, R1 is other than methyl. When, R2 is Hydrogen and R3, R4 both are alkyl, R1 is selected from NHSO2CH3 or NHSO2C2H5. Disperse dyes of Formula (I) have excellent washing fastness and light fastness on polyester fiber and polyester blends.
摘要:
An embodiment of the present invention provides an RF ID card reader, comprising RF ID circuitry to generate an RF ID signal, a transceiver in communication with said RF ID circuitry and an array antenna associated with said transceiver for scanning an area for at least one tag and establishing communication with at least one tag.
摘要:
An RF ID tag system and method that utilizes an RF ID tag and an RF ID tag reader which incorporates a dynamically reconfigurable wireless antenna and/or an array antenna and/or a switched polarization antenna. The dynamically reconfigurable wireless antenna embodiment comprises at least one multi-layered RF module, said at least one RF module further comprising at least one RF connector for receipt of at least one RF signal and at least one layer of tunable dielectric material and one layer of metal fabricated into said RF module; an RF motherboard for acceptance of RF signals and distribution of the transmit energy to said RF module at the appropriate phases to generate a beam in the commanded direction and width; and a controller for determining the correct voltage signal to send to said at least one multi-layered RF module.
摘要:
A method of assay for the outcome of a reaction comprises conducting a reaction between a first reactant and a second reactant to produce from the first reactant a product having at least one new structural feature not present in the first reactant or the second reactant, e.g. by cleaving the first reactant or adding to it, producing a multiple-phage tagged complex comprising at least two different viruses and said product or said first reactant, in which complex at least one of said viruses is connected to said product using a said new structural feature or is lost from said first reactant upon formation of said new structural feature, and determining the presence or amount of said complex by a dual-phage assay.