Invention Grant
US09041012B2 Galium-nitride light emitting device having a microarray-type structure 有权
具有微阵列型结构的氮化镓发光器件

Galium-nitride light emitting device having a microarray-type structure
Abstract:
A microarray-type nitride light emitting device includes a light emitting semiconductor layer; and a multilayered transparent contact layer to divide a plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions. The multilayered transparent contact layer includes a first transparent contact layer that is composed of a material having a resistance value which is heat determinable, and that divides the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions; a transparent resistor layer that is defined within the first transparent contact layer, that is composed of the material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer; and a second transparent contact layer to connect the plurality of microarray-type light emitting regions.
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