Invention Grant
- Patent Title: Galium-nitride light emitting device having a microarray-type structure
- Patent Title (中): 具有微阵列型结构的氮化镓发光器件
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Application No.: US13473561Application Date: 2012-05-16
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Publication No.: US09041012B2Publication Date: 2015-05-26
- Inventor: Sung Bum Bae
- Applicant: Sung Bum Bae
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2011-0046309 20110517
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/38 ; H01L33/42

Abstract:
A microarray-type nitride light emitting device includes a light emitting semiconductor layer; and a multilayered transparent contact layer to divide a plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions. The multilayered transparent contact layer includes a first transparent contact layer that is composed of a material having a resistance value which is heat determinable, and that divides the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions; a transparent resistor layer that is defined within the first transparent contact layer, that is composed of the material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer; and a second transparent contact layer to connect the plurality of microarray-type light emitting regions.
Public/Granted literature
- US20120292634A1 GALIUM-NITRIDE LIGHT EMITTING DEVICE OF MICROARRAY TYPE STRUCTURE AND MANUFACTURING THEREOF Public/Granted day:2012-11-22
Information query
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