发明授权
- 专利标题: Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
- 专利标题(中): 使用牺牲缓冲层和可回收底物生产独立式半导体的方法
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申请号: US13990756申请日: 2010-12-01
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公开(公告)号: US09041027B2公开(公告)日: 2015-05-26
- 发明人: Aaron Joseph Ptak , Yong Lin , Andrew Norman , Kirstin Alberi
- 申请人: Aaron Joseph Ptak , Yong Lin , Andrew Norman , Kirstin Alberi
- 申请人地址: US CO Golden
- 专利权人: Alliance for Sustainable Energy, LLC
- 当前专利权人: Alliance for Sustainable Energy, LLC
- 当前专利权人地址: US CO Golden
- 代理商 John C. Stolpa; Michael A. McIntyre
- 国际申请: PCT/US2010/058514 WO 20101201
- 国际公布: WO2012/074523 WO 20120607
- 主分类号: H01L33/26
- IPC分类号: H01L33/26 ; H01L21/02 ; C30B23/02 ; C30B25/18 ; C30B29/40 ; H01L29/04
摘要:
A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.