发明授权
US09041034B2 Light emitting diode component comprising polysilazane bonding layer
有权
包含聚硅氮烷粘合层的发光二极管组件
- 专利标题: Light emitting diode component comprising polysilazane bonding layer
- 专利标题(中): 包含聚硅氮烷粘合层的发光二极管组件
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申请号: US13876373申请日: 2011-10-25
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公开(公告)号: US09041034B2公开(公告)日: 2015-05-26
- 发明人: Guoping Mao , Stephen J. Znameroski , Yu Yang , Terry L. Smith
- 申请人: Guoping Mao , Stephen J. Znameroski , Yu Yang , Terry L. Smith
- 申请人地址: US MN St. Paul
- 专利权人: 3M Innovative Properties Company
- 当前专利权人: 3M Innovative Properties Company
- 当前专利权人地址: US MN St. Paul
- 代理商 Carolyn A. Fischer
- 国际申请: PCT/US2011/057635 WO 20111025
- 国际公布: WO2012/067766 WO 20120524
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/50 ; H01L33/44
摘要:
In one embodiment, a semiconductor component, such as a wavelength converter wafer, is described wherein the wavelength converter is bonded to an adjacent inorganic component with a cured bonding layer comprising polysilazane polymer. The wavelength converter may be a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles. In another embodiment, the semiconductor component is a pump LED component bonded to an adjacent component with a cured bonding layer comprising polysilazane polymer. The adjacent component may the described wavelength converter(s) or another component comprised of inorganic material(s) such as a lens or a prism. Also described are methods of making semiconductor components such as wavelength converters and LED's.
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