Invention Grant
- Patent Title: Field effect transistor device with shaped conduction channel
- Patent Title (中): 具有形状导通通道的场效应晶体管器件
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Application No.: US13551164Application Date: 2012-07-17
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Publication No.: US09041057B2Publication Date: 2015-05-26
- Inventor: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/165 ; H01L29/423 ; H01L29/66
Abstract:
A field effect transistor device includes a substrate, a silicon germanium (SiGe) layer disposed on the substrate, gate dielectric layer lining a surface of a cavity defined by the substrate and the silicon germanium layer, a metallic gate material on the gate dielectric layer, the metallic gate material filling the cavity, a source region, and a drain region.
Public/Granted literature
- US20120280279A1 Field Effect Transistor Device with Shaped Conduction Channel Public/Granted day:2012-11-08
Information query
IPC分类:
