发明授权
- 专利标题： Through silicon via wafer and methods of manufacturing
- 专利标题（中）： 通过硅片通过晶圆和制造方法
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申请号： US13527131申请日： 2012-06-19
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公开(公告)号： US09041210B2公开(公告)日： 2015-05-26
- 发明人: Jeffrey P. Gambino , Jessica A. Levy , Cameron E. Luce , Daniel S. Vanslette , Bucknell C. Webb
- 申请人： Jeffrey P. Gambino , Jessica A. Levy , Cameron E. Luce , Daniel S. Vanslette , Bucknell C. Webb
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768
摘要：
A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.
公开/授权文献
- US20130334701A1 THROUGH SILICON VIA WAFER AND METHODS OF MANUFACTURING 公开/授权日：2013-12-19