Invention Grant
- Patent Title: Through silicon via wafer and methods of manufacturing
- Patent Title (中): 通过硅片通过晶圆和制造方法
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Application No.: US13527131Application Date: 2012-06-19
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Publication No.: US09041210B2Publication Date: 2015-05-26
- Inventor: Jeffrey P. Gambino , Jessica A. Levy , Cameron E. Luce , Daniel S. Vanslette , Bucknell C. Webb
- Applicant: Jeffrey P. Gambino , Jessica A. Levy , Cameron E. Luce , Daniel S. Vanslette , Bucknell C. Webb
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768
Abstract:
A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.
Public/Granted literature
- US20130334701A1 THROUGH SILICON VIA WAFER AND METHODS OF MANUFACTURING Public/Granted day:2013-12-19
Information query
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