发明授权
- 专利标题： Partial magnetic biasing of magnetoresistive sensor
- 专利标题（中）： 磁阻传感器的部分磁偏置
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申请号： US13194828申请日： 2011-07-29
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公开(公告)号： US09041391B2公开(公告)日： 2015-05-26
- 发明人: Kaizhong Gao , Jiexuan He , Jiaoming Qiu
- 申请人： Kaizhong Gao , Jiexuan He , Jiaoming Qiu
- 申请人地址： US CA Cupertino
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Cupertino
- 代理机构： Hall Estill Attorneys at Law
- 主分类号： G01R33/02
- IPC分类号： G01R33/02 ; G01R33/09
摘要：
Various embodiments can be generally directed to a magnetoresistive stack with a first stripe height and a biasing magnet positioned adjacent the magnetoresistive stack. The biasing magnet can have a second stripe height that is less than the first stripe height. The first and second stripe heights may correspond to a minimum signal to noise ratio in the magnetoresistive stack.
公开/授权文献
- US20130027032A1 Partial Magnetic Biasing of Magnetoresistive Sensor 公开/授权日：2013-01-31