Invention Grant
- Patent Title: Multi-level voltage converter
- Patent Title (中): 多电平电压转换器
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Application No.: US13821081Application Date: 2010-12-13
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Publication No.: US09042142B2Publication Date: 2015-05-26
- Inventor: Eryong Guan , Niko Railo , Aiping Wu
- Applicant: Eryong Guan , Niko Railo , Aiping Wu
- Applicant Address: CH Zurich
- Assignee: ABB Technology Ltd.
- Current Assignee: ABB Technology Ltd.
- Current Assignee Address: CH Zurich
- Agency: Driggs, Hogg, Daugherty & Del Zoppo Co., LPA
- Agent Robert A. Jefferis
- International Application: PCT/CN2010/079713 WO 20101213
- International Announcement: WO2012/079213 WO 20120621
- Main IPC: H02M7/44
- IPC: H02M7/44 ; G05F3/08 ; H02M7/483

Abstract:
The invention discloses a voltage source converter and a voltage source converter system. The voltage source converter comprises: a multi-level voltage source converter, being adapted to output a multiple levels of a first voltage at one of two first output terminals through a multiple of first conducting paths; a first energy store; and a first switching element, being arranged to directly connected with the first output terminal, and being adapted to switch the first energy store in or out of the first conducting path so as to combine a level of the voltage of the first energy store with the level of the first voltage as a second voltage output at a second output terminal. By having the topology as above, the voltage class of each of the power semiconductors can be kept lower with the number of the power semiconductors unchanged. Besides, VDRM is lowed as compared to conventional topology. This renders the reduction of the cost and the increase of the liability.
Public/Granted literature
- US20130176014A1 MULTI-LEVEL VOLTAGE CONVERTER Public/Granted day:2013-07-11
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