发明授权
US09048260B2 Method of forming a semiconductor device with tall fins and using hard mask etch stops
有权
用高散热片形成半导体器件并使用硬掩模蚀刻停止件的方法
- 专利标题： Method of forming a semiconductor device with tall fins and using hard mask etch stops
- 专利标题（中）： 用高散热片形成半导体器件并使用硬掩模蚀刻停止件的方法
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申请号： US13997161申请日： 2011-12-31
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公开(公告)号： US09048260B2公开(公告)日： 2015-06-02
- 发明人: Ritesh Jhaveri , Bernard Sell , Tahir Ghani
- 申请人： Ritesh Jhaveri , Bernard Sell , Tahir Ghani
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 国际申请： PCT/US2011/068269 WO 20111231
- 国际公布： WO2013/101237 WO 20130704
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/66 ; H01L21/8234 ; H01L21/8238 ; H01L29/78
摘要：
A hard mask etch stop is formed on the top surface of tall fins to preserve the fin height and protect the top surface of the fin from damage during etching steps of the transistor fabrication process. In an embodiment, the hard mask etch stop is formed using a dual hard mask system, wherein a hard mask etch stop layer is formed over the surface of a substrate, and a second hard mask layer is used to pattern a fin with a hard mask etch stop layer on the top surface of the fin. The second hard mask layer is removed, while the hard mask etch stop layer remains to protect the top surface of the fin during subsequent fabrication steps.
公开/授权文献
- US20140191300A1 HARD MASK ETCH STOP FOR TALL FINS 公开/授权日：2014-07-10
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