Invention Grant
- Patent Title: Silicon shaping
- Patent Title (中): 硅成型
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Application No.: US13631769Application Date: 2012-09-28
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Publication No.: US09053952B2Publication Date: 2015-06-09
- Inventor: Shawn X. Arnold , Matthew E. Last
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Downey Brand LLP
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/78 ; H01L21/762 ; H01L29/06 ; H01L21/683 ; H01L21/822
Abstract:
One embodiment for forming a shaped substrate for an electronic device can form a shaped perimeter to define the substrate shape on the surface of a substrate. The shaped perimeter can extend at least part way into the substrate. A subsequent thinning process can remove substrate material and expose the shaped perimeter effectively forming shaped dies from the substrate.
Public/Granted literature
- US20140091439A1 SILICON SHAPING Public/Granted day:2014-04-03
Information query
IPC分类:
