Invention Grant
- Patent Title: Nitride semiconductor device and method of manufacturing the same
- Patent Title (中): 氮化物半导体器件及其制造方法
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Application No.: US13771411Application Date: 2013-02-20
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Publication No.: US09053955B2Publication Date: 2015-06-09
- Inventor: Moon-sang Lee , Sung-soo Park , Dae-ho Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0098485 20120905
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/12
Abstract:
A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.
Public/Granted literature
- US20140061587A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-03-06
Information query
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