公开(公告)号：US09412588B2

公开(公告)日：2016-08-09

申请号：US14505181

申请日：2014-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-sang Lee ,  Sung-soo Park

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02642 ,  H01L21/0265

Abstract: A method of growing a nitride semiconductor layer includes forming a plurality of nano-structures on a substrate, forming a first buffer layer on the substrate such that upper portions of each of the nano-structures are exposed, removing the nano-structures to form voids in the first buffer layer, and growing a nitride semiconductor layer on the first buffer layer including the voids.

Abstract translation: 生长氮化物半导体层的方法包括在衬底上形成多个纳米结构，在衬底上形成第一缓冲层，使得每个纳米结构的上部被暴露，去除纳米结构以形成空隙 在第一缓冲层中，并且在包括空隙的第一缓冲层上生长氮化物半导体层。

公开(公告)号：US08969178B2

公开(公告)日：2015-03-03

申请号：US13743634

申请日：2013-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-sang Lee ,  Sung-soo Park ,  Young-soo Park

IPC: H01L21/02

CPC classification number: H01L21/02263 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642

Abstract: A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.

Abstract translation: 制造大面积氮化镓（GaN）衬底的方法包括在硅衬底上形成缓冲层，在缓冲层顶表面的边缘上形成绝缘层图案，在缓冲层上生长GaN层，以及 去除绝缘层图案和GaN层和硅衬底的一部分。

公开(公告)号：US09318660B2

公开(公告)日：2016-04-19

申请号：US14590548

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-soo Park ,  Moon-sang Lee

IPC: H01L21/36 ,  H01L33/32 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L33/12 ,  H01L33/24

CPC classification number: H01L33/32 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/12 ,  H01L33/24

Abstract: Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.

公开(公告)号：US09741560B2

公开(公告)日：2017-08-22

申请号：US13733632

申请日：2013-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-soo Park ,  Moon-sang Lee ,  Young-soo Park

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L29/20 ,  H01L21/3065

CPC classification number: H01L21/02389 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/3065 ,  H01L29/2003

Abstract: A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature.

公开(公告)号：US20150248743A1

公开(公告)日：2015-09-03

申请号：US14713124

申请日：2015-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-hyun Yoon ,  Moon-sang Lee

IPC: G06T3/40 ,  G06K9/60 ,  G06T7/00

CPC classification number: G06T3/40 ,  G06K9/60 ,  G09G2340/0407 ,  H04N5/23212 ,  H04N5/2628

Abstract: Provided are a method and an apparatus for displaying a photo on a screen having any shape. The method includes: extracting photographing information about a photo having a first shape; adjusting the photo for display with a shape optimized for a screen having a second shape, based on the extracted photographing information; and displaying the adjusted photo on the screen.

Abstract translation: 提供了一种用于在具有任何形状的屏幕上显示照片的方法和装置。 该方法包括：提取关于具有第一形状的照片的拍摄信息; 基于所提取的拍摄信息，调整用于具有针对具有第二形状的屏幕优化的形状的显示的照片; 并在屏幕上显示调整好的照片。

公开(公告)号：US09053955B2

公开(公告)日：2015-06-09

申请号：US13771411

申请日：2013-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-sang Lee ,  Sung-soo Park ,  Dae-ho Yoon

IPC: H01L29/06 ,  H01L29/12

CPC classification number: H01L29/0684 ,  B82Y10/00 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02658 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

Abstract: A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material.

Abstract translation: 氮化物半导体器件包括在衬底上的位错控制层和位错控制层上的氮化物半导体层。 位错控制层包括由第一材料制成的第一纳米颗粒和由第二材料制成的至少一个第二纳米颗粒的纳米复合材料。