发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14112926申请日： 2012-03-26
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公开(公告)号： US09054103B2公开(公告)日： 2015-06-09
- 发明人: Kazuo Tomita , Toshiyuki Oashi , Hidenori Sato
- 申请人： Kazuo Tomita , Toshiyuki Oashi , Hidenori Sato
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge PC
- 优先权： JP2011-093880 20110420
- 国际申请： PCT/JP2012/057690 WO 20120326
- 国际公布： WO2012/144295 WO 20121026
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L27/02 ; H01L21/8238
摘要：
A gate interconnection portion includes a first gate interconnection portion, a second gate interconnection portion, and a third gate interconnection portion. The first gate interconnection portion is formed in parallel to a Y axis direction toward a power supply interconnection and extends to a prescribed position within an element formation region. The second gate interconnection portion is formed in parallel to a direction obliquely bent with respect to the Y-axis direction from the first gate interconnection portion toward the power supply interconnection, and extends across a boundary between the element formation region and an element isolation insulating film, which is in parallel to an X axis direction. The third gate interconnection portion further extends in parallel to the Y-axis direction from the second gate interconnection portion toward the power supply interconnection.
公开/授权文献
- US20140043063A1 SEMICONDUCTOR DEVICE 公开/授权日：2014-02-13
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