发明授权
- 专利标题： Vertical MOSFET electrostatic discharge device
- 专利标题（中）： 垂直MOSFET静电放电装置
-
申请号： US13281293申请日： 2011-10-25
-
公开(公告)号： US09054131B2公开(公告)日： 2015-06-09
- 发明人: Jeng-Hsing Jang , Yi-Nan Chen , Hsien-Wen Liu
- 申请人： Jeng-Hsing Jang , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L29/66 ; H01L27/02 ; H01L21/8234 ; H01L29/423 ; H01L29/06
摘要：
A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each drain region, and a source region surrounding and disposed under the recessed gates and the electrostatic discharge implant regions.
公开/授权文献
- US20130099309A1 VERTICAL MOSFET ELECTROSTATIC DISCHARGE DEVICE 公开/授权日：2013-04-25
信息查询
IPC分类:
