发明授权
US09054328B2 Process for controlling the acceptor strength of solution-processed transition metal oxides for OLED applications
有权
用于控制用于OLED应用的溶液处理的过渡金属氧化物的受主强度的方法
- 专利标题： Process for controlling the acceptor strength of solution-processed transition metal oxides for OLED applications
- 专利标题（中）： 用于控制用于OLED应用的溶液处理的过渡金属氧化物的受主强度的方法
-
申请号： US14129275申请日： 2012-06-21
-
公开(公告)号： US09054328B2公开(公告)日： 2015-06-09
- 发明人: Thomas Kugler , Richard J. Wilson
- 申请人： Thomas Kugler , Richard J. Wilson
- 申请人地址： GB Cambridgeshire
- 专利权人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
- 当前专利权人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED
- 当前专利权人地址： GB Cambridgeshire
- 代理机构： Marshall, Gerstein & Borun LLP
- 优先权： GB1110770.3 20110624
- 国际申请： PCT/GB2012/000544 WO 20120621
- 国际公布： WO2012/175925 WO 20121227
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L51/50 ; H01L51/52 ; H01L51/00
摘要：
The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL.
公开/授权文献
信息查询
IPC分类:
