Invention Grant
US09058869B2 Applying a bias signal to memory cells to reverse a resistance shift of the memory cells
有权
对存储单元施加偏置信号以反转存储单元的电阻偏移
- Patent Title: Applying a bias signal to memory cells to reverse a resistance shift of the memory cells
- Patent Title (中): 对存储单元施加偏置信号以反转存储单元的电阻偏移
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Application No.: US13761301Application Date: 2013-02-07
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Publication No.: US09058869B2Publication Date: 2015-06-16
- Inventor: Ara Patapoutian , Antoine Khoueir , Ryan James Goss , Jon D. Trantham
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
Data is written to cells of a resistance-based, non-volatile memory. An activity metric is tracked since the writing of the data to the cells. In response to the activity metric satisfying a threshold, a bias signal is applied to the cells to reverse a resistance shift of the cells.
Public/Granted literature
- US09025359B2 Applying a bias signal to memory cells to reverse a resistance shift of the memory cells Public/Granted day:2015-05-05
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