发明授权
- 专利标题: Data-aware SRAM systems and methods forming same
- 专利标题(中): 数据感知SRAM系统和方法形成
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申请号: US14083249申请日: 2013-11-18
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公开(公告)号: US09058899B2公开(公告)日: 2015-06-16
- 发明人: Chien-Yuan Chen , Yi-Tzu Chen , Hau-Tai Shieh , Tsung-Yung Jonathan Chang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/417 ; G11C11/412 ; G11C11/413
摘要:
Exemplary embodiments for SRAM cells, new control units for SRAM systems, and embodiments of SRAM systems are described herein. An SRAM cell is configured to receive a first input voltage signal and a second input voltage signal with a different value from the first input voltage signal, and to maintain a first stored value signal and a second stored value signal. A control circuit is configured to receive a first input voltage signal and a second input voltage signal, and controlled by a sleep signal, a selection signal, and a data input signal, so that the output of the control circuit is data sensitive to the data input signal. An SRAM system comprises a plurality of SRAM cells, controlled the disclosed control circuit wherein an SRAM cell has two input voltage signals controlled by a data input signal and its complement signal respectively.
公开/授权文献
- US20140119104A1 Data-Aware SRAM Systems and Methods Forming Same 公开/授权日:2014-05-01
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