Invention Grant
US09061318B2 Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
有权
互补金属氧化物半导体（CMOS）超声换能器及其形成方法
- Patent Title: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
- Patent Title (中): 互补金属氧化物半导体（CMOS）超声换能器及其形成方法
-
Application No.: US14561384Application Date: 2014-12-05
-
Publication No.: US09061318B2Publication Date: 2015-06-23
- Inventor: Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
- Applicant: Butterfly Network, Inc.
- Applicant Address: US CT Guilford
- Assignee: Butterfly Network, Inc.
- Current Assignee: Butterfly Network, Inc.
- Current Assignee Address: US CT Guilford
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: B06B1/02
- IPC: B06B1/02 ; H01L29/84 ; H04R19/00 ; G01N29/24 ; B81C1/00
Abstract:
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
Public/Granted literature
- US20150084053A1 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME Public/Granted day:2015-03-26
Information query
IPC分类:
