Invention Grant
US09061890B2 Methods of forming buried electromechanical structures coupled with device substrates and structures formed thereby
有权
形成与装置基板和由此形成的结构相结合的掩埋机电结构的方法
- Patent Title: Methods of forming buried electromechanical structures coupled with device substrates and structures formed thereby
- Patent Title (中): 形成与装置基板和由此形成的结构相结合的掩埋机电结构的方法
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Application No.: US13798600Application Date: 2013-03-13
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Publication No.: US09061890B2Publication Date: 2015-06-23
- Inventor: Rajashree Baskaran
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/00 ; H01L29/84 ; B81C1/00 ; B81B7/02 ; H01L23/31
Abstract:
Methods of forming integrated MEMS structures are described. Those methods and structures may include forming at least one MEMS structure on a first substrate, forming a first bonding layer on a top surface of the first substrate, and then coupling the first bonding layer disposed on the first substrate to a second substrate, wherein the second substrate comprises a device layer. The bonding may comprise a layer transfer process, wherein an integrated MEMS device is formed.
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