发明授权
US09063407B2 Photolithography mask method for a wafer, method for producing same, and photolithography method for wafer using the same 有权
用于晶片的光刻掩模方法,其制造方法和使用该晶片的晶片的光刻方法

  • 专利标题: Photolithography mask method for a wafer, method for producing same, and photolithography method for wafer using the same
  • 专利标题(中): 用于晶片的光刻掩模方法,其制造方法和使用该晶片的晶片的光刻方法
  • 申请号: US13814882
    申请日: 2011-08-10
  • 公开(公告)号: US09063407B2
    公开(公告)日: 2015-06-23
  • 发明人: Florian BieckSven Spiller
  • 申请人: Florian BieckSven Spiller
  • 申请人地址: JP Tokyo
  • 专利权人: DISCO CORPORATION
  • 当前专利权人: DISCO CORPORATION
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
  • 优先权: WOPCT/IB2010/053612 20110810
  • 国际申请: PCT/IB2011/053565 WO 20110810
  • 国际公布: WO2012/020382 WO 20120216
  • 主分类号: G03F1/50
  • IPC分类号: G03F1/50 G03F1/00
Photolithography mask method for a wafer, method for producing same, and photolithography method for wafer using the same
摘要:
A photolithography mask for a semiconductor wafer. The mask includes a protrusion section that protrudes from a handling section of the mask. An outer shape of the handling section enables handling by a mask aligner device. The protrusion includes a face surface provided at a level which is different from a face surface area of the handling section.
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