Invention Grant
- Patent Title: High frequency pseudo dual port memory
- Patent Title (中): 高频伪双端口存储器
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Application No.: US14061528Application Date: 2013-10-23
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Publication No.: US09064556B2Publication Date: 2015-06-23
- Inventor: Chirag Gulati , Lakshmikantha Holla Vakwadi , Sei Seung Yoon
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/12

Abstract:
A pseudo dual port (PDP) memory is disclosed having a write driver that selectively precharges only one of a bit line and a complement bit line in a bit line pair responsive to a bit value to be written into an accessed bitcell while discharging a remaining one of the bit line and the complement bit line. In this fashion, the cleanup time between a read operation and a write operation during a read/write clock cycle is advantageously reduced.
Public/Granted literature
- US20150109865A1 HIGH FREQUENCY PSEUDO DUAL PORT MEMORY Public/Granted day:2015-04-23
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