Invention Grant
- Patent Title: Optimization of variable resistance memory cells
- Patent Title (中): 可变电阻记忆单元的优化
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Application No.: US13762913Application Date: 2013-02-08
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Publication No.: US09064563B2Publication Date: 2015-06-23
- Inventor: Antoine Khoueir , Mark Allen Gaertner , Ryan James Goss
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A data storage device may generally be constructed and operated with at least one variable resistance memory cell configured with non-factory operational parameters by a controller. The non-factory operational parameters are assigned in response to an identified variance from a predetermined threshold in at least one variable resistance memory cell.
Public/Granted literature
- US20140226388A1 Optimization of Variable Resistance Memory Cells Public/Granted day:2014-08-14
Information query
