Invention Grant
- Patent Title: Systems and methods for writing to high-capacity memory
- Patent Title (中): 用于写入高容量内存的系统和方法
-
Application No.: US13840008Application Date: 2013-03-15
-
Publication No.: US09069660B2Publication Date: 2015-06-30
- Inventor: Nir Jacob Wakrat , Matthew J. Byom
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: APPLE INC.
- Current Assignee: APPLE INC.
- Current Assignee Address: US CA Cupertino
- Agency: Van Court & Aldridge LLP
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G11C16/10 ; G11C16/00

Abstract:
Systems and methods for writing to high-capacity memory are disclosed. In high-capacity memory systems in which the capacity of the characteristic portion of the memory (e.g., a page of NAND flash memory) exceeds the capacity of a buffer used to write to the memory, underutilization issues are prevalent. Data organized in the buffer can be combined with additional data to improve utilization of the characteristic portion. According to various embodiments, the additional data can include duplicate copies of the data, whitened data, or any other suitable type of data.
Public/Granted literature
- US20140281136A1 SYSTEMS AND METHODS FOR WRITING TO HIGH-CAPACITY MEMORY Public/Granted day:2014-09-18
Information query