A memory system digitally communicates with a host device to provide data storage capacity for the host device. The memory system includes a plurality of modules, each module including a nonvolatile memory section. In one feature, at least a particular one of the modules is configured to independently maintain a module portion of a distributed flash translation layer for the nonvolatile memory section of only that particular module based on one or more module input parameters. In another feature, a particular module defines an independent execution of at least one of a wear leveling function, a garbage collection function and a bit density function. Associated methods are described.