Invention Grant
- Patent Title: Quantum dot light emitting element and method for manufacturing the same
- Patent Title (中): 量子点发光元件及其制造方法
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Application No.: US13112128Application Date: 2011-05-20
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Publication No.: US09073752B2Publication Date: 2015-07-07
- Inventor: Ho-Cheol Kang , Young-Hoon Noh , Chang-Hee Lee , Kook Heon Char , Seong-Hoon Lee , Jeong Hun Kwak , Wan Ki Bae , Jae Hoon Lim , Dong Gu Lee
- Applicant: Ho-Cheol Kang , Young-Hoon Noh , Chang-Hee Lee , Kook Heon Char , Seong-Hoon Lee , Jeong Hun Kwak , Wan Ki Bae , Jae Hoon Lim , Dong Gu Lee
- Applicant Address: KR Seoul KR Seoul
- Assignee: LG Display Co., Ltd.,SNU R&DB FOUNDATION
- Current Assignee: LG Display Co., Ltd.,SNU R&DB FOUNDATION
- Current Assignee Address: KR Seoul KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2010-0047397 20100520
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L29/10 ; H01L29/12 ; H01L21/16 ; H01L29/26 ; H01L31/12 ; B82Y20/00 ; H01L51/50 ; H01L21/02 ; H05B33/10

Abstract:
The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.
Public/Granted literature
- US20110284819A1 QUANTUM DOT LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-11-24
Information query
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