Circuit structure fabrication methods are provided which include: providing an interlayer structure above a substrate, the interlayer structure including porogens dispersed within a dielectric material; and pulse laser annealing the interlayer structure to form a treated interlayer structure, the pulse laser annealing polymerizing the dielectric material of the interlayer structure to form a polymeric dielectric material, that includes pores disposed therein. The pulse laser annealing facilitates increasing elasticity modulus of the treated interlayer structure by, in part, maintaining structural integrity of the treated interlayer structure, notwithstanding that there are pores disposed within the polymeric dielectric material which, for instance, facilitates reducing dielectric constant of the treated interlayer structure.