Invention Grant
- Patent Title: Semiconductor process for modifying shape of recess
- Patent Title (中): 用于修改凹槽形状的半导体工艺
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Application No.: US13902870Application Date: 2013-05-27
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Publication No.: US09076652B2Publication Date: 2015-07-07
- Inventor: Ming-Hua Chang , Chun-Yuan Wu , Chin-Cheng Chien , Tien-Wei Yu , Yu-Shu Lin , Szu-Hao Lai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02
Abstract:
A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
Public/Granted literature
- US20140349467A1 SEMICONDUCTOR PROCESS Public/Granted day:2014-11-27
Information query
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