Invention Grant
US09076670B2 Integrated circuit and method of forming the integrated circuit with improved logic transistor performance and SRAM transistor yield
有权
集成电路和形成集成电路的方法具有改进的逻辑晶体管性能和SRAM晶体管产量
- Patent Title: Integrated circuit and method of forming the integrated circuit with improved logic transistor performance and SRAM transistor yield
- Patent Title (中): 集成电路和形成集成电路的方法具有改进的逻辑晶体管性能和SRAM晶体管产量
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Application No.: US13943786Application Date: 2013-07-16
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Publication No.: US09076670B2Publication Date: 2015-07-07
- Inventor: Himadri Sekhar Pal , Ebenezer Eshun , Shashank S. Ekbote
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank Cimino
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/66
Abstract:
In an integrated circuit that includes an NMOS logic transistor, an NMOS SRAM transistor, and a resistor, the gate of the SRAM transistor is doped at the same time that the resistor is doped, thereby allowing the gate of the logic transistor to be separately doped without requiring any additional masking steps.
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Information query
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