Invention Grant
- Patent Title: Oxynitride channel layer, transistor including the same and method of manufacturing the same
- Patent Title (中): 氧氮化物沟道层，包括其的晶体管及其制造方法
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Application No.: US13770007Application Date: 2013-02-19
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Publication No.: US09076721B2Publication Date: 2015-07-07
- Inventor: Joon-seok Park , Sun-jae Kim , Tae-sang Kim , Hyun-suk Kim , Myung-kwan Ryu , Seok-jun Seo , Jong-baek Seon , Kyoung-seok Son , Sang-yoon Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0071373 20120629
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/24 ; H01L29/66 ; H01L29/786
Abstract:
A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.
Public/Granted literature
- US20140001464A1 OXYNITRIDE CHANNEL LAYER, TRANSISTOR INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-01-02
Information query
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