公开(公告)号：US09076721B2

公开(公告)日：2015-07-07

申请号：US13770007

申请日：2013-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-seok Park ,  Sun-jae Kim ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Abstract translation: 晶体管包括沟道层，其包括掺杂有铪（Hf）和锆（Zr）中的至少一种的氧氮化物半导体，沟道层的一个侧部上的源极和沟道层的另一个侧部的漏极，栅极 对应于沟道层，以及沟道层和栅极之间的栅极绝缘层。

公开(公告)号：US09256113B2

公开(公告)日：2016-02-09

申请号：US13773357

申请日：2013-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-hoon Han ,  Wan-joo Maeng ,  Sang-yoon Lee

IPC: G03H1/08 ,  G02F1/01 ,  G02F1/03 ,  G02F1/19 ,  G02F1/23

CPC classification number: G02F1/19 ,  G02F1/23

Abstract: A plasmonic modulator and an optical apparatus including the same are provided. The plasmonic modulator includes a first metal layer, and a second metal layer facing the first metal layer. The plasmonic modulator further includes a refractive index varying layer disposed between the first and second metal layers and including a varying refractive index, and an insulating nitride layer disposed between the refractive index varying layer and the first metal layer.

Abstract translation: 提供了等离子体激元调制器和包括它们的光学装置。 等离子体激元调制器包括第一金属层和面向第一金属层的第二金属层。 等离子体激元调制器还包括设置在第一和第二金属层之间并且包括变化的折射率的折射率变化层，以及设置在折射率变化层和第一金属层之间的绝缘氮化物层。

公开(公告)号：US09123750B2

公开(公告)日：2015-09-01

申请号：US14016599

申请日：2013-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-seok Park ,  Sun-jae Kim ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Abstract translation: 根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。 沟道层可以包括金属氮氧化物。 可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。 沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。 沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。

公开(公告)号：US09053979B2

公开(公告)日：2015-06-09

申请号：US13779355

申请日：2013-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Baek Seon ,  Myung-kwan Ryu ,  Kyung-Bae Park ,  Sang-yoon Lee ,  Bon-Won Koo

IPC: H01L29/10 ,  H01L29/12 ,  H01L31/18

CPC classification number: H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract translation: 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。

公开(公告)号：US08829515B2

公开(公告)日：2014-09-09

申请号：US13721635

申请日：2012-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-baek Seon ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Joon-seok Park ,  Seok-jun Seo ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L29/06 ,  H01L29/22 ,  H01L29/786 ,  H01L29/36

CPC classification number: H01L29/2206 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

Abstract translation: 具有硫掺杂的氮氧化锌通道层的晶体管及其制造方法包括相对于约0.1at％至约1.2at％的锌含量的硫含量比的ZnON沟道层，源电极和漏极 分别形成在沟道层的第一区域和第二区域上的电极，对应于沟道层的栅电极以及沟道层和栅电极之间的栅极绝缘层。

公开(公告)号：US09312391B2

公开(公告)日：2016-04-12

申请号：US14043324

申请日：2013-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-baek Seon ,  Myung-kwan Ryu ,  Sang-yoon Lee

IPC: H01B1/06 ,  H01B1/08 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01B1/06 ,  H01B1/08 ,  H01L29/78693

Abstract: A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.

Abstract translation: 用于形成氧化物半导体的溶液组合物包括金属氧化物前体和硫代乙酸金属及其衍生物之一。

公开(公告)号：US09207637B2

公开(公告)日：2015-12-08

申请号：US13837477

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-seok Pyun ,  Andrew Putilin ,  Alexander Morozov ,  Ivan Bovsunovskiy ,  Vladislav Druzhin ,  Sang-yoon Oh ,  Sang-yoon Lee ,  Chul-sung Choi

IPC: G03H1/00 ,  G03H1/16 ,  G03H1/04 ,  G03H1/10

CPC classification number: G03H1/0476 ,  G03H1/10 ,  G03H1/16 ,  G03H2001/0413 ,  G03H2001/0415 ,  G03H2001/048 ,  G03H2223/16 ,  G03H2223/23 ,  G03H2227/02

Abstract: A hologram recording and reproducing apparatus including: a coherent light source; a beam splitter which splits a beam emitted from the coherent light source into a signal beam and a reference beam; a signal beam forming unit which modulates the signal beam split and directs the modulated signal beam onto a hologram recording medium; and a reference beam forming unit which directs the reference beam to be irradiated onto a location on the hologram recording medium which overlaps with a location on the hologram recording medium on which the signal beam is incident, wherein the signal beam forming unit includes: a first light guide member which transmits the signal beam split by the beam splitter; a spatial light modulator (SLM) which modulates the signal beam transmitted through the first light guide member; and a holographic Fourier transformation optical device which focuses the modulated signal beam onto the hologram recording medium.

Abstract translation: 一种全息图记录和再现装置，包括：相干光源; 分束器，其将从相干光源发射的光束分解成信号光束和参考光束; 信号光束形成单元，其对所述信号光束进行分割并将调制的信号光束引导到全息图记录介质上; 以及参考光束形成单元，其将要照射的参考光束引导到全息图记录介质上与信号光束入射的全息图记录介质上的位置重叠的位置，其中信号光束形成单元包括：第一 导光构件，其传输由分束器分裂的信号光束; 空间光调制器（SLM），其调制通过第一导光构件传输的信号光束; 以及将调制信号光束聚焦到全息图记录介质上的全息傅里叶变换光学装置。

公开(公告)号：US09070881B2

公开(公告)日：2015-06-30

申请号：US14281380

申请日：2014-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Zhenan Bao ,  Gaurav Giri ,  Sang-yoon Lee ,  Stefan Mannsfeld

IPC: H01L51/00 ,  H01L21/02

CPC classification number: H01L51/0014 ,  H01L21/02282 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0028

Abstract: A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

Abstract translation: 一种制造有机半导体薄膜的方法包括将有机半导体溶液涂覆在基板上，并将有机半导体溶液沿导致施加到有机半导体溶液上的剪切应力的方向剪切以形成有机半导体薄膜，其中 控制剪切速度使得调节有机半导体溶液的分子间距离。