Invention Grant
US09076808B2 RF MEMS isolation, series and shunt DVC, and small MEMS 有权
RF MEMS隔离,串联和并联DVC,以及小型MEMS

RF MEMS isolation, series and shunt DVC, and small MEMS
Abstract:
The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.
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