Invention Grant
- Patent Title: RF MEMS isolation, series and shunt DVC, and small MEMS
- Patent Title (中): RF MEMS隔离,串联和并联DVC,以及小型MEMS
-
Application No.: US14240677Application Date: 2012-08-31
-
Publication No.: US09076808B2Publication Date: 2015-07-07
- Inventor: Roberto Gaddi , Richard L. Knipe , Robertus Petrus Van Kampen , Anartz Unamuno
- Applicant: Roberto Gaddi , Richard L. Knipe , Robertus Petrus Van Kampen , Anartz Unamuno
- Applicant Address: US CA San Jose
- Assignee: CAVENDISH KINETICS, INC.
- Current Assignee: CAVENDISH KINETICS, INC.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- International Application: PCT/US2012/053481 WO 20120831
- International Announcement: WO2013/033613 WO 20130307
- Main IPC: H03H9/00
- IPC: H03H9/00 ; H01L49/02 ; H01G5/18 ; H01G5/38 ; H01G5/40 ; H01H59/00 ; H03K17/16 ; H03K17/687

Abstract:
The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.
Public/Granted literature
- US20140300404A1 RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS Public/Granted day:2014-10-09
Information query