Selective local metal cap layer formation for improved electromigration behavior

Invention Grant

US09076847B2 Selective local metal cap layer formation for improved electromigration behavior 有权

Title translation: 选择性局部金属盖层形成，以改善电迁移行为

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Patent Title: Selective local metal cap layer formation for improved electromigration behavior
Patent Title (中): 选择性局部金属盖层形成，以改善电迁移行为
Application No.: US13744705

Application Date: 2013-01-18
Publication No.: US09076847B2

Publication Date: 2015-07-07
Inventor: Matthew S. Angyal , Junjing Bao , Griselda Bonilla , Samuel S. Choi , James A. Culp , Thomas W. Dyer , Ronald G. Filippi , Stephen E. Greco , Naftali E. Lustig , Andrew H. Simon
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Catherine Ivers
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/48 ; H01L21/768 ; H01L23/532

Selective local metal cap layer formation for improved electromigration behavior

Abstract:

A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.

Abstract(Chinese):

形成集成电路器件的布线结构的方法包括在层间电介质层（ILD）内形成一条或多条铜线; 掩蔽所述一条或多条铜线的选定区域; 在所述一条或多条铜线的暴露区域上选择性地镀覆金属帽区域; 以及在所述一个或多个铜线的所述金属盖区域和未加盖的区域上形成共形绝缘体层。

Public/Granted literature

US20140203435A1 SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRATION BEHAVIOR Public/Granted day:2014-07-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）