Invention Grant
US09082473B2 Power supply brownout protection circuit and method for embedded FRAM
有权
电源欠压保护电路及嵌入式FRAM方法
- Patent Title: Power supply brownout protection circuit and method for embedded FRAM
- Patent Title (中): 电源欠压保护电路及嵌入式FRAM方法
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Application No.: US13785583Application Date: 2013-03-05
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Publication No.: US09082473B2Publication Date: 2015-07-14
- Inventor: Abidur Rahman , Tatsuyuki Nihei , Tatsuro Sato , Uchino Osamu
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; Frank D. Cimino
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C5/14

Abstract:
Corruption of data in a FRAM (2) is avoided by applying a regulated voltage (VLDO) to a conductive pin (5-1). A switch (SW1) is coupled between the conductive pin and a power terminal of the FRAM so a FRAM supply voltage (VFRAM) is equal to the regulated voltage when the switch is closed. The conductive pin is coupled to a power terminal of a digital circuit (3) so a digital circuit supply voltage (VCORE) is equal to the regulated voltage. A power interruption is detected to produce an interruption signal (nBORdet) that opens the switch and also prevents starting of new read and write operations in the FRAM. A sufficient FRAM supply voltage is maintained by an internal capacitor (CINT) while ongoing read and write operations in the FRAM are completed during a predetermined interval. The conductive pin may be coupled to the switch by bonding wire inductance (LWIRE) between the switch and the conductive pin to inhibit flow of transient currents between them.
Public/Granted literature
- US20140254235A1 POWER SUPPLY BROWNOUT PROTECTION CIRCUIT AND METHOD FOR EMBEDDED FRAM Public/Granted day:2014-09-11
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