Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14537232Application Date: 2014-11-10
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Publication No.: US09082864B2Publication Date: 2015-07-14
- Inventor: Toshinari Sasaki , Kosei Noda , Yuta Endo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-014652 20110127
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L29/786 ; H01L29/24 ; H01L29/04
Abstract:
A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention.
Public/Granted literature
- US20150060853A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
Information query
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